Vanadium oxide assisted synthesis of networked silicon oxide nanowires and their growth dependence--颗粒学报PARTICUOLOGY

Banis, M. N., Zhang, Y., Li, R., Sun, X., Jiang, X., & Nikanpour, D. (2011). Vanadium oxide assisted synthesis of networked silicon oxide nanowires and their growth dependence. Particuology, 9(5), 458–464. https://doi.org/10.1016/j.partic.2011.02.005

Vanadium oxide assisted synthesis of networked silicon oxide nanowires and their growth dependence

Mohammad Norouzi Banis ^a, Yong Zhang ^a, Ruying Li ^a, Xueliang Sun ^a *, Xinxiang Jiang ^b, Darius Nikanpour ^b

a Department of Mechanical and Materials Engineering, University of Western Ontario, London, Canada
b Spacecraft Engineering, Space Technologies, Canadian Space Agency, 6767 route de l’Aeroport, St-Hubert, Quebec J3Y 8Y9, Canada

10.1016/j.partic.2011.02.005

Volume 9, Issue 5, October 2011, Pages 458-464

Received 15 December 2010, Revised 14 February 2011, Accepted 21 February 2011, Available online 6 June 2011.

E-mail: xsun@eng.uwo.ca; xsun9@uwo.ca

Highlights

Abstract

Networked silicon oxide nanowires have been synthesized by VO₂-assisted chemical vapor deposition at 1000 °C on silicon substrate without supplying any gaseous or liquid Si source. Systematic study on the nanowire growth has indicated that morphology and composition of the final products are sensitive to the catalyst components, reaction atmosphere and temperature. Compared to Au and VO₂ as catalysts individually, co-catalysts of Au and VO₂ play a critical role in the formation of networked SiO₂ nanowires. Transmission electron microscopy (TEM) and scanning electron microscopy (SEM) observations indicate that the silicon oxide nanowires have smooth surfaces with uniform diameters of 30–100 nm, and their lengths reach several hundred micrometers. X-ray photoelectron spectroscopy (XPS) results reveal the atomic ratio of silicon to oxygen is about 1:2. Growth dependence of the networked nanowires on hydrogen and temperature is also discussed. Vapor-liquid-solid (VLS) process is proposed for the growth mechanism of the networked nanowires. It is also found that the growth mechanism of SiO₂ nanowires by increasing the temperature up to 1200 °C changes to vapor–solid (VS) processes since wire-like structures can be formed without any catalyst or H₂gas introduced into the system.

Graphical abstract

Keywords

Networked SiO₂ nanowire; CVD; Vanadium dioxide; Gold

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